Internationales Journals
1) B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, S.Desbief, A.Kalboussi, D.Vuillaume, K.Lmimouni "Electron-Transport Polymeric Gold Nanoparticles Organic Memory Device: Artificial Synapse for neuromorphic applications" Organic Electronics (Accepted 2017)
2) A. Nasri, A. Boubaker, B. Hafsi, W. Khaldi, A. Kalboussi "A comparison study of electrode material effects on the molecular single electron transistor" Organic Electronics, dx.doi.org/10.1016/j.orgel.2017.05.03 [accessed Aug 28, 2017].
3) B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, K.Lmimouni, A.Kalboussi "N-Type Polymeric Organic Flash Memory Device: Effect of Reduced Graphene Oxide Floating Gate" Organic Electronics, (DOI:10.1016/j.orgel.2017.02.035).
4) W.Khaldi, B.Hafsi, K.Ferchichi, A.Boubaker, A.Nasri, K.Lmimouni, A.Kalboussi " Traps density and temperature effects on the performance of organic rectifying diode based on pentacene" Organic Electronics 44 (2017) 106-109. (http://dx.doi.org/10.1016/j.orgel.2017.01.039).
5) A.Boubaker, B.Hafsi, K.Lmimouni, A.Kalboussi "A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models" Journal of Materials Science: Materials in Electronics, doi:10.1007/s10854-017-6480-y.
6) A.Nasri, A.Boubaker, W.Khaldi, B.Hafsi, A.Kalboussi "Tuning negative differential resistance in a single molecule transistor: Design of logic gates and effect of various oxygen and hydrogen induced deffects"Digest Journal of Nanomaterials and Biostructures, Vol. 12, No. 1, p. 99 - 110, 2017.
7) B.Hafsi, A.Boubaker, D.Guerin, S.Lenfant, K.Lmimouni, A.Kalboussi "Traps and Interface Fixed Charge Effects on a Solution-Processed n-Type Polymeric-Based Organic Field-Effect Transistor" Journal of ELECTRONIC MATERIALS, DOI: 10.1007/s11664-016-5067-
8) B. Hafsi, A. Boubaker, N. Ismaïl, A. Kalboussi, and K. Lmimouni, "TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect," J. Korean Phys. Soc., vol. 67, no. 7, pp. 1201–1207, Oct. 2015.
9) A.Boubaker, A.Nasri, B.Hafsi and A.Kalboussi "Compact Modelling of Single Electron Memory based on Perceptron Design" J. Mater. Sci. Eng., vol. 04, no. 05, pp. 1–12, 2015.
10) B.Hafsi, R.Elmissaoui, A.Kalboussi “neural network based on SET inverter structures: Neuro-Inspired Memory” World Journal of Nano Science and Engineering, Volume 4, pp 134-142, December 2014.
11) B.Hafsi, A.Boubaker, I.Krout, A.Kalboussi “Simulation of Single Electron Transistor Inverter Neuron: Memory Application” International Journal of Information and computer Science (IJICS) Volume 2 Issue 1, January 2013.
Internationales Conferences
1) A.Boujneh, A.Boubaker, W.Khaldi, K.Ferchichi, B.Hafsi, K.Lmimouni, A.Kalboussi "Etude des diodes organiques verticales et hybrides de redressement" TELECOM'2017 &10 ème JFMMA, Rabat- Maroc.
2) B.Hafsi, A.Boubaker, A.Kalboussi, D.Guerin, S.Lenfant, S.Desbief, F.Alibart, D.Vuillaume, K.Lmimouni “Anti-Hebbien Learning Behavior of Nanoparticles Memory Organic Field Effect Transistor” European Materials Society conference spring 2016, Lille, France.
3) S.Hleli, B.Hafsi, N.Hizem, A.Kalboussi " Semi-classical vs. Quantum mechanical charge description at the interface Al2O3/Si for MIS device", European Materials Society conference spring 2016, Lille, France.
4) B.Hafsi, S.Desbief; D.Guerin, S.Lenfant, D.Vuillaume; K.Lmimouni “Réalisation et optimisation de transistors organiques de type n par des procédés en solution”TELECOM’2015 & 9ème JFMMA, Meknès- Maroc.
5) M.Thaghri, B.Hafsi, A. Boubaker, N.Ismaïl, A.Kalboussi, K.Lmimouni “Simulation des dispositifs à base de semi-conducteurs organiques Par ISE TCAD” TELECOM’2015 & 9ème JFMMA, Meknès- Maroc.
6) B.Hafsi, A.Boubaker, N.Ismaïl, A.Kalboussi, D.Vuillaume, K.Lmimouni “Simulation and comparative study of graphene field effect transistor using ISE TCAD”7th International Conference On molecular Electronics, ElecMol14, 2014, Strasbourg, France.
7) A.Boubaker, B.Hafsi, A.Kalboussi “Single Electron Random Access Memory Based On Perceptron” The Second International Conference on “Research to Applications & Markets“. March 28-30, 2013- Sousse, Tunisia.
8) B.Hafsi, A.Boubaker, I.Krout, A.Kalboussi “Study and modeling neural memory based on single electron transistor using Simon simulator” International multi-conference on systems, signals and devices SSD12 .March 20-23, 2012- Chemnitz, Germany.
